? 2001 ixys all rights reserved symbol symbol symbol symbol symbol test conditions test conditions test conditions test conditions test conditions maximum ratings maximum ratings maximum ratings maximum ratings maximum ratings v v v v v ces ces ces ces ces t j = 25 c to 150 c 35n140a 1400 v 35n135a 1350 v v v v v v cgr cgr cgr cgr cgr t j = 25 c to 150 c; r ge = 1 m ? 35n140a 1400 v 35n135a 1350 v v v v v v ges ges ges ges ges continuous 20 v v v v v v gem gem gem gem gem transient 30 v i i i i i c25 c25 c25 c25 c25 t c = 25 c70a i i i i i c90 c90 c90 c90 c90 t c = 90 c35a i i i i i cm cm cm cm cm t c = 25 c, 1 ms 140 a ssoa ssoa ssoa ssoa ssoa v ge = 15 v, t j = 125 c, r g = 22 ? i cm = 70 a (rbsoa) (rbsoa) (rbsoa) (rbsoa) (rbsoa) clamped inductive load, l = 30 h @ 960 v t t t t t sc sc sc sc sc v ge = 15 v, v ce = 840 v, t j = 125 c 10 s (scsoa) (scsoa) (scsoa) (scsoa) (scsoa) r g = 22 ?, non repetitive p p p p p c c c c c t c = 25 c 300 w t t t t t j j j j j -55 ... +150 c t t t t t jm jm jm jm jm 150 c t t t t t stg stg stg stg stg -55 ... +150 c m m m m m d d d d d mounting torque 1.13/10 nm/lb.in. weight weight weight weight weight 6 g maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s features ? international standard package jedec to-247 ? high frequency igbt with guaranteed short circuit soa capability ? fast fall time for switching speeds up to 20 khz ? 2nd generation hdmos tm process ? low v ce(sat) - for minimum on-state conduction losses ? mos gate turn-on - drive simplicity applications ? ac motor speed control ? dc servo and robot drive ? uninterruptible power supplies (ups) ? switch-mode and resonant-mode power supplies ? welding advantages ? easy to mount with 1 screw (isolated mounting screw hole) ? high power density to-247 ad to-247 ad to-247 ad to-247 ad to-247 ad g c e g = gate, c = collector, e = emitter, tab = collector 92716h (5/01) symbol test conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. bv ces i c = 3 ma, v ge = 0 v 35n140a 1400 v 35n135a 1350 v ge(th) i c = 4 ma, v ce = v ge 48v i ces v ce = 0.8 v ces t j = 25c 400 ma v ge = 0 v t j = 125c 2 ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v 3.4 4 v high voltage, high speed igbt short circuit soa capability v ces i c25 v ce(sat) 1400 v 70 a 4 v 1350 v 70 a 4 v ixsh 35n140a ixsh 35n135a
ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixys reserves the right to change limits, test conditions, and dimensions. ixsh 35n135a ixsh 35n140a to-247 ad outline symbol test conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 26 s pulse test, t 300 ms, duty cycle d 2 % i c(on) v ge = 15 v, v ce = 10 v 210 a c ies 4150 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 235 pf c res 55 pf q g 165 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 45 nc q gc 75 nc t d(on) 40 ns t ri 60 ns t d(off) 200 400 ns t fi 400 750 ns e off 12 mj t d(on) 40 ns t ri 65 ns e on 4mj t d(off) 200 ns t fi 800 ns e off 18 mj r thjc 0.42 k/w r thck 0.25 k/w 1 = gate 2 = collector 3 = emitter tab = collector inductive load, t inductive load, t inductive load, t inductive load, t inductive load, t j j j j j = 25 = 25 = 25 = 25 = 25 c c c c c i c = i c90 , v ge = 15 v, l = 100 h v ce = 960 v, r g = 2.7 ? switching times may increase for v ce (clamp) > 960 v, higher t j or increased r g inductive load, t inductive load, t inductive load, t inductive load, t inductive load, t j j j j j = 125 = 125 = 125 = 125 = 125 c c c c c i c = i c90 , v ge = 15 v, l = 100 h v ce = 960 v, r g = 2.7 ? remarks: switching times may increase for v ce (clamp) > 960 v, higher t j or increased r g
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